Design of three stage 38 GHz LNA for satellite communications

  • Lakshmi Ballaa, Venkata Krishna Sharma Gollakotaa
Keywords: Monolithic microwave integrated circuit (MMIC); gallium arsenide (GaAs); Noise Figure (NF); pseudomorphic High electron mobility transistor (pHEMT); Low noise amplifier (LNA);

Abstract

The latest pp10 technology provided by WIN foundry has been exploited towards a low noise amplifier (LNA) design with high gain and low noise.This paper demonstrates a Q band MMIC LNA realization for a high speed and high data rate satellite communication receiver system. A 38GHz three stage LNA has been designed, by cascading three single stages, with each stage having the same source inductor value.  The LNA is realized using 0.1 µm WIN foundry PP1010 technology with GaAs pHEMT process. Within the frequency range of 36-40 GHz, the designed LNA attained a gain of 27 dB with P1dB at 7dBm and with a 1.78 dB noise figure. Gain and noise figure are competitive with the other published Q band LNAs. The power consumption of designed LNA at 36-40 GHz range is about 57mW from 1V DC supply.

Published
2021-07-22
How to Cite
Venkata Krishna Sharma Gollakotaa, L. B. (2021). Design of three stage 38 GHz LNA for satellite communications. Design Engineering, 4221-4231. Retrieved from http://thedesignengineering.com/index.php/DE/article/view/2860
Section
Articles