Design and Simulation of down Conversion FET Ring Mixer using Weak Inversion Biasing Technique for 5G Band
Abstract
In this paper, a down conversion FET ring mixer is designed and simulated for 5G band. The designed mixer is based on the double balanced topology to improve the isolation between input (RF) and output (IF) ports. This mixer is simulated on 0.18µm CMOS technology. The transistors of the mixer are biased in weak inversion region or sub-threshold region to reduce the required LO power in mixer. Mixer achieves minimum conversion loss of 6.27 dB. The P1dB is 7.50dB showing good linearity of the passive mixer. The improved noise figure is 4.32 dB. The measured reflection co-efficient (S11) is this -14.20 dB which is better than -10dB. The IF is taken as 200MHz.The input RF power is -90dBm.The LO power is taken as 7dBm.